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2.2.5 Temperature dependence of the energy bandgap
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PDF) Undergraduate experiment: Determination of the band gap in germanium and silicon
The forbidden gap in the energy bands of germanium at room temperature is about
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In a semiconductor, the forbidden energy gap between the valance band and the conduction band is of the order ofa)1 evb)1 MeVc)5 eVd)1 GeVCorrect answer is option 'A'. Can you explain this
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Forbidden energy gap of Ge is `0.75eV`, maximum wave length of incident radiation for producing elec - YouTube
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For silicon, the energy gap at 300 K is
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Tullional MICer is same In germanium crystal, the forbidden energy gap in joule is (2) zero (1) 1.6 x 10-19 go. When two semiconductor of p and n type (3) 1.12 x 10-19 (4) 1.76 x 10-19 which acts like
Classification of materials based on forbidden gap
